the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. junction field effect transistor 2SK3230B n-channel silicon junction field effect transistor for impedance converter of ecm data sheet document no. d17283ej1v0ds00 (1st edition) date published august 2004 ns cp(k) printed in japan 2004 description the 2SK3230B is suitable for converter of ecm. general-purpose product. features ? low noise: ? 108.5 db typ. (v dd = 2.0 v, c = 5 pf, r l = 2.2 k ? ) ? especially suitable for audio and telephone ? small package: sc-89 (tusm) ordering information part number package 2SK3230B sc-89 (tusm) absolute maximum ratings (t a = 25c) drain to source voltage (v gs = ? 1.0 v) v dsx 20 v gate to drain voltage v gdo ? 20 v drain current i d 10 ma gate current i g 10 ma total power dissipation p t 100 mw junction temperature t j 125 c storage temperature t stg ? 55 to +125 c caution please take care of esd (electro static disch arge) when you handle the device in this document. package drawing (unit: mm) 0.3 0.05 1.6 0.1 0.5 0.05 0.8 0.1 0.4 2 0.5 0.5 1.6 0.1 3 1 0 .1 +0.1 ?0.05 0.2 +0.1 ?0 equivalent circuit 3 2 1 1: source 2: drain 3: gate
data sheet d17283ej1v0ds 2 2SK3230B electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain cut-off current i dss v ds = 2.0 v, v gs = 0 v 90 200 430 a gate cut-off voltage v gs(off) v ds = 2.0 v, i d = 1.0 a ? 0.37 ? 1.0 v forward transfer admittance | y fs1 | v ds = 2.0 v, i d = 30 a, f = 1.0 khz 300 480 s | y fs2 | v ds = 2.0 v, v gs = 0 v, f = 1.0 khz 750 1300 s input capacitance c iss v ds = 2.0 v, v gs = 0 v, f = 1.0 mhz 4.0 pf voltage gain g v v dd = 2.0 v, c = 5 pf, r l = 2.2 k ? , ? 1.0 db v in = 10 mv, f = 1 khz noise voltage nv v dd = 2.0 v, c = 5 pf, r l = 2.2 k ? , ? 108.5 db a-curve i dss classification marking ce cf ch cj i dss ( a) 90 to 180 150 to 240 210 to 350 320 to 430 voltage gain test circuit c r l v dd out noise voltage test circuit c r l v dd nv (r.m.s) jis a
data sheet d17283ej1v0ds 3 2SK3230B typical characteristics (t a = 25c) derating factor of power dissipation drain current vs. drain to source voltage dt - derating factor - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t a - ambient temperature - c i d - drain current - a 0 200 400 600 800 1000 0246810 0 v ? 0.2 v ? 0.3 v ? 0.1 v v gs = 0.2 v 0.1 v v ds - drain to source voltage - v gate to source current vs. gate to source voltage drain current vs. gate to source voltage i gs - gate to source current - a 0 10 20 30 40 ? 10 ? 20 ? 30 ? 40 0.2 0.4 0.6 0.8 ? 0.2 ? 0.4 ? 0.6 ? 0.8 v gs - gate to source voltage - v i d - drain current - a 0 200 400 600 800 1000 1200 1400 1600 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 v ds = 2.0 v v gs - gate to source voltage - v input capacitance vs. drain to source voltage forward transfer admittance and gate cut-off voltage vs. zero gate voltage drain current c iss - input capacitance - pf 1 10 110100 v gs = 0 v f = 1.0 mhz v ds - drain to source voltage - v | y fs | - forward transfer admittance - ms v gs(off) - gate cut-off voltage - v 0.1 1 10 10 100 1000 | y fs | v gs(off) v ds = 2.0 v i dss - zero gate voltage drain current - a
data sheet d17283ej1v0ds 4 2SK3230B voltage gain vs. drain current noise voltage vs. drain current g v - voltage gain - db 3 2 1 0 ? 1 ? 2 ? 3 ? 4 ? 5 10 100 1000 v dd = 2.0 v c = 5 pf r l = 2.2 k ? v in = 10 mv f = 1 khz i dss - drain current - a nv - noise voltage - db ? 103 ? 105 ? 107 ? 109 ? 111 ? 113 ? 115 10 100 1000 v dd = 2.0 v c = 5 pf r l = 2.2 k ? i dss - drain current - a
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